Описание
Транзисторы — Биполярные NPN
MMUN2231LT1G
ON Semiconductor
Description: TRANS PREBIAS NPN 50V SOT23-3
Power — Max: 246mW
Current — Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Resistor — Emitter Base (R2): 2.2 kOhms
Resistor — Base (R1): 2.2 kOhms
Voltage — Collector Emitter Breakdown (Max): 50V
Current — Collector (Ic) (Max): 100mA
Transistor Type: NPN — Pre-Biased
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
